Real-world kinetics via simulations
F. A. Houle and W. D. Hinsberg, Annual Reports in Computational Chemistry, 2, 3 (2006)

This work describes use of CKS for teaching chemical kinetics beyond simple cases solvable by closed-form expressions. It presents two open-ended projects suitable for students.

Numeric analyses of the roles of gas phase and liquid phase UV photochemistry in conventional and immersion 193 nm lithography
W. D. Hinsberg and F. A. Houle, Proc. SPIE, 6153, 615303 (2006).

This is an analysis of gas phase reactive photoproducts produced in air above the resist during conventional 193nm photolithography, with comparison to chemistry in immersion photolithography.

Numeric analysis of the role of liquid phase UV photochemistry in 193nm immersion lithography
W. D. Hinsberg and F. A. Houle, J. Vac. Sci. Technol. B, 23, 2427-2435 (2005).

This paper presents calculations of concentrations of trace reaction products present in water immersion fluid as a result of 193nm photoresist exposure.

Characterization of polymer reactive dissolution and swelling using a quartz crystal microbalance and reflectance interferometry
W. Hinsberg, F. Houle, S-W. Lee, H. Ito and K. Kanazawa, Macromolecules, 38, 1882-1989 (2005).

This a detailed description of an experimental approach to characterization of resist dissolution, with results of simulations showing how details of how ionization reactions coupled with transport lead to dissolution behaviors similar to those seen experimentally.

Acid-base reactions in a positive tone chemically amplified photoresist and their effect on imaging
F. A. Houle, W. D. Hinsberg and M. I. Sanchez, J. Vac. Sci. Technol.B, 22, 747-757 (2004).

This is a simulation study of the effect of added base on resist imaging. It shows that commonly accepted ideas of how bases work are not accurate, and how coupled reaction-diffusion with neutralization affects the latent image.

Reactive dissolution kinetics of lithographic copolymers
W. Hinsberg, F. Houle and H. Ito, Advances in Resist Technology and Processing XXI, SPIE, 5376 (2004).

This paper is a combined experimental-simulation study of how resists dissolve.

Using the critical ionization model for resist development to estimate contrast curves and roughening
F. A. Houle, W. D. Hinsberg and M. I. Sanchez, Advances in Resist Technology and Processing XX, SPIE, 5039, 334 (2003).

This paper shows how resist dissolution simulations can be used to estimate a development contrast curve and extent of edge roughening, and provides insights to the origin of contrast in dissolution.

Extendability of chemically amplified resists: another brick wall?
W. D. Hinsberg, F. A. Houle, M. I. Sanchez, J. A. Hoffnagle, G. M. Wallraff, D. R. Medeiros, J. L. Cobb, Advances in Resist Technology and Processing XX, SPIE, 5039, 1 (2003).

This is a discussion of the technological implications of our findings on the origins of resist blur.

Estimated impact of shot noise in extreme ultraviolet lithography
J. L. Cobb, F. A. Houle and G. M. Gallatin, Emerging Lithographic Technologies VII, Proc. SPIE, 5037, 397 (2003).

This paper presents a proposed design of a shot noise experiment that aims to separate the effect of chemical statistics from photon statistics.

Statistical limitations of printing 50 and 80 nm contact holes by EUV lithography
G. M. Gallatin, F. A. Houle, and J. L. Cobb, J. Vac. Sci. Technol.B, 21, 3172-3176 (2003).

This is a chemical kinetics simulation of how image fidelity is affected by chemical statistics for high energy photons, and has predictions on tradeoffs between sensitivity and image quality.

Kinetic model of positive-tone resist dissolution and roughening
F. A. Houle, W. D. Hinsberg and M. I. Sanchez, Macromolecules, 35, 3591-3600 (2002)

This paper describes a chemical kinetics implementation of the critical ionization model for resist dissolution, and shows how statistical effects in dissolution can lead to edge roughness when aerial image contrast is not perfect.

High numerical aperture: imaging implications for chemically amplified photoresists
M. I. Sanchez, F. A. Houle, J.A. Hoffnagle, T. A. Brunner, W. D. Hinsberg, Adv. Resist technology and processing XIX, Proc. SPIE, 4690, 2002.

This is a combined experimental and modeling study of the effect of polarization on resist images at high numerical aperture.

Effect of Resist Components on Image Blur during Post-Exposure Bake of Chemically Amplified Resists
F. A. Houle, W. D. Hinsberg, M. I. Sanchez and J. A. Hoffnagle, J. Vac. Sci. Technol. B, 20, 924-931 (2002).

This describes experiments and simulations on the impact of using 2 different photoacid generators and a base on latent image formation in photoresists.

Chemistry and Physics of the Post-expose Bake Process in Chemically Amplified Resists
W. Hinsberg, F. Houle, M. Sanchez and G. Wallraff, IBM Journal of Research and Development, 45, 667 (2001).

This is a review of current understanding of how chemically amplified photoresists work.

Determination of Coupled Acid Catalysis-Diffusion Processes in a Positive Tone Chemically Amplified Photoresist
F. A. Houle, W. D. Hinsberg, M. Morrison, G. Wallraff, C. Larson, M. Sanchez and J. Hoffnagle, J. Vac. Sci. Technol. B, 18, 1874-1885, 2000.

This describes a combined experimental-simulation protocol for determining acid diffusion coefficients in chemically amplified photoresists, and presents data for a model resist system. Simulations were done using both homogeneous and coupled reaction-diffusion models.

Factors Controlling Pattern Formation in Chemically Amplified Resists at Sub-100 nm Dimensions
W. Hinsberg, F. Houle, G. Wallraff, M. Sanchez, M. Morrison, J. Hoffnagle, H. Ito, C. Nguyen, C. Larson, P. Brock and G. Breyta, J. Photopolym. Sci. Tech., 12, 649-662 (1999)

This paper describes nanoscale chemical and physical phenomena controlling imaging in photoresists, investigated using both experimental and simulation techniques

Experimental Method for Quantifying Acid Diffusion in Chemically Amplified Resists
G. Wallraff, W. D. Hinsberg, F. A. Houle, M. Morrison, C. Larson, M. Sanchez, J. Hoffnagle, P. J. Brock and G. Breyta, Proc. SPIE, Advances in Resist Technology and Processing XVI, 3678, 138 (1999)

This paper describes several experimental and simulation approaches to investigating acid diffusion in photoresists.

Stochastic simulation of heat flow with application to laser-solid interactions
F. A. Houle and W. D. Hinsberg, Applied Physics A, 66, 143-151 (1998)

This paper presents a general algorithm for calculating heat flow in arbitrarily complex bodies using fully temperature-dependent materials properties. Calculations of laser heating are presented to demonstrate the validity of the method.

Mechanistic studies of chemically amplified photoresists
W. D. Hinsberg, G. Wallraff, F. A. Houle, M. Morrison, J. Frommer, R. Beyers and J. Hutchinson, Organic Thin Films, ACS Symposium Series 695, C. Frank, Ed. Am. Chem. Soc., Washington DC, pp 344-359 (1998)

A review of detailed chemical kinetics studies of chemically amplified photoresists, and a discussion of current challenges.

In situ FTIR spectroscopy and stochastic modelling of surface chemistry of amorphous silicon growth
U. Wetterauer, J. Knobloch, P. Hess and F. A. Houle, J. Appl. Phys., 83, 6096-6105 (1988)

This is a combined experimental and modelling study that traces primary reaction pathways during photochemical amorphous silicon deposition in order to understand the connection between the majority reactants and the extent of H incorporation in the films.

Reactivity and kinetic parameters of UVII-HS
G. Wallraff, J. Opitz, W. Hinsberg, F. Houle, J. Thackeray, T. Fedynyshyn, D. Kang, M. Rajaranam, SPIE Advances in Resist Processing XIV 3049, 490-500 (1997)

This presents kinetics data for UVII-HS chemically amplified photoresist processing.

Stochastic simulations of temperature programmed desorption kinetics
F. A. Houle and W. D. Hinsberg, Surface Science, 338, 329-346 (1995).

This article describes techniques for using stochastic simulations to model a variety of temperature programmed desorption processes, including desorption coupled to reaction, and desorption under the influence of lateral interactions.

Simulations of thermal decomposition and film growth from the group VI metal hexacarbonyls
F. A. Houle and W. D. Hinsberg, J. Phys. Chem., 99, 14477-14485 (1995).

This is a description of a chemical model for the detailed surface chemistry involved in chemical vapor deposition from these precursors.

Kinetics of chemically amplified resists
G. Wallraff, W. Hinsberg, F. A. Houle, J. Opitz, D. Hopper and J. Hutchinson, SPIE Advanced Resist Technology and Processing XII, 438, 486-495 (1995).

This paper described experiments and simulations characterizing complex proton transfer equilibria in deep UV resist materials.

Thermal and acid-catalyzed deprotection kinetics in deep UV resist materials
G. Wallraff, J. Hutchinson, W. Hinsberg, F. A. Houle, P. Seidel, R. Johnson and W. Oldham, J. Vac. Sci. Technol. B12, 3857-3862 (1994).

Simulations are used to extract uncatalyzed and acid-catalyzed reaction rate constants for resist polymer decomposition.

Visible laser induced nucleation and growth of Cr, Mo and W films from the hexacarbonyls. Reactivity of CO on film surfaces
F. A. Houle and K. A. Singmaster, J. Phys. Chem. 96, 10425-10439 (1992).

This is an experimental study in which stochastic simulations of heat flow and of chemical vapor deposition are used to extract the temperature dependence of contaminant incorporation in the films.

If you have further questions about the Chemical Kinetics Simulator package, find errors in the CKS and Kinetics Simulation Project pages or have any comments about them, please send e-mail to hnsbrg@almaden.ibm.com.